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 HVR100
Variable Capacitance Diode for AM tuner
REJ03G0102-0700 Rev.7.00 Feb 21, 2005
Features
* * * * High capacitance ratio. (n = 16.0 min) High figure of merit. (Q = 200 min) To be usable at low voltage. Small Resin Package (SRP) is suitable for surface mount design.
Ordering Information
Type No. HVR100 Laser Mark 2 Renesas Code PLSP0002ZA-A Previous Code SRP
Pin Arrangement
Cathode mark Mark
1
2
2
1. Cathode 2. Anode
Rev.7.00 Feb 21, 2005 page 1 of 4
HVR100
Absolute Maximum Ratings
(Ta = 25C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V C C
Electrical Characteristics
(Ta = 25C)
Item Reverse voltage Reverse current Capacitance Symbol VR IR C1 C3 C5 C6 C7 Capacitance ratio Figure of merit Matching error ESD-Capability * Note:
2
Min 15 -- 421.5 182.0 73.2 42.2 26.2 20.4 16 200 -- 80
Typ -- -- -- -- -- -- -- -- -- -- -- --
Max -- 100 524.6 275.7 121.4 72.2 41.6 28.2 -- -- 3.0 --
Unit V nA pF
Test Condition IR = 10 A VR = 9 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 5 V, f = 1 MHz VR = 6 V, f = 1 MHz VR = 7 V, f = 1 MHz
C8 n Q 1 C/C * --
-- -- % V
VR = 8 V, f = 1 MHz C1 / C8 C = 450 pF, f = 1 MHz VR = 1 to 8 V, f = 1 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
1. Each group shall uniform a multiple of 3 diodes. A set of HVR100 is of uniform C-V characteristics. Measure max. value and min. value of capacitance at each bias point of VR = 1V through 8 V. Calculate Matching Error, (Cmax - Cmin) C/C = x 100 (%) Cmin
2. Failure criterion ; IR < 100 nA at VR = 9 V
Rev.7.00 Feb 21, 2005 page 2 of 4
HVR100
Main Characteristic
10-5 10-6
Reverse current IR (A)
10-7 10-8 10-9 10-10 10-11 10-12
0
10
20
30
Reverse voltage VR (V) Fig.1 Reverse current vs. Reverse voltage
103 f = 1MHz
Capacitance C (pF)
102
10 1.0
10
Reverse voltage VR (V)
40
Fig.2 Capacitance vs. Reverse voltage
Rev.7.00 Feb 21, 2005 page 3 of 4
HVR100
Package Dimensions
JEITA Package Code SC-77A RENESAS Code PLSP0002ZA-A Previous Code SRP / SRPV MASS[Typ.] 0.010g
D b
E HE
l1
e1
Reference
Dimension in Millimeters
Symbol
A2
l1 b2
Pattern of terminal position areas
A1
A1 A2 b D E HE b2 e1 l1
Min 0 0.90 0.40 1.40 2.45 3.60 -
Nom 1.50 3.50 1.50
Max 0.1 1.30 0.80 1.80 2.85 4.00 -
Rev.7.00 Feb 21, 2005 page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0


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